A voltage-reference-free pulse density modulation (VRF-PDM) 1-V input switched-capacitor 1/2 voltage converter with output voltage trimming by hot carrier injection and periodic activation scheme
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
A 1-V input, 0.45-V output switched-capacitor (SC) 2:1 voltage converter is developed in 65-nm CMOS. A proposed voltage-reference-free pulse density modulation (VRF-PDM) increased the efficiency from 17% to 73% at 50-μA output current by reducing the pulse density and eliminating the voltage reference circuit. An output voltage trimming by the hot carrier injection to a comparator and a periodic activation scheme of the SC converter are also proposed to solve the problems attributed to VRF-PDM.
Details
| Originalsprache | Englisch |
|---|---|
| Titel | 2011 Symposium on VLSI Circuits - Digest of Technical Papers |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers (IEEE) |
| Seiten | 280-281 |
| Seitenumfang | 2 |
| ISBN (Print) | 978-4-86348-166-4 |
| Publikationsstatus | Veröffentlicht - 17 Juni 2011 |
| Peer-Review-Status | Ja |
Konferenz
| Titel | 2011 Symposium on VLSI Circuits - Digest of Technical Papers |
|---|---|
| Dauer | 15 - 17 Juni 2011 |
| Ort | Kyoto, Japan |
Externe IDs
| Scopus | 80052669888 |
|---|---|
| ORCID | /0000-0002-4152-1203/work/165453416 |
Schlagworte
Schlagwörter
- Human computer interaction, Voltage measurement, Modulation, Switches, Pulse measurements, Density measurement, Hot carrier injection