A new static high fan-in OR-NOR gate structure suitable for low power CMOS VLSI

Research output: Contribution to book/conference proceedings/anthology/reportConference contributionContributedpeer-review

Contributors

Abstract

In this work we present a new technique for designing high fan-in OR/NOR gates, suitable for static full swing logic styles like SCMOS. This circuit consumes a little static power but its dynamic power consumption is very small. In 500 MHZ its total power consumption is 2.7 times smaller than the power consumption of SCMOS in equal delay condition. The area needed by this method is below half the area needed by DCVSL or SCMOS. This circuit can work in low voltage as low as 1 V without significant performance degradation and is robust to process variations like threshold voltage variations. We present simulation results in 0.18 μm technology and compare performance of our method with other static logic styles.

Details

Original languageEnglish
Title of host publicationInternational Conference on Microelectronics (ICM) 2005
Pages102-105
Number of pages4
Publication statusPublished - Dec 2005
Peer-reviewedYes
Externally publishedYes

Conference

TitleInternational Conference on Microelectronics 2005
Abbreviated titleICM 2005
Conference number17
Duration13 - 15 December 2005
CityIslamabad
CountryPakistan

External IDs

Scopus 33847095940

Keywords

Research priority areas of TU Dresden