A new static high fan-in OR-NOR gate structure suitable for low power CMOS VLSI
Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review
Contributors
Abstract
In this work we present a new technique for designing high fan-in OR/NOR gates, suitable for static full swing logic styles like SCMOS. This circuit consumes a little static power but its dynamic power consumption is very small. In 500 MHZ its total power consumption is 2.7 times smaller than the power consumption of SCMOS in equal delay condition. The area needed by this method is below half the area needed by DCVSL or SCMOS. This circuit can work in low voltage as low as 1 V without significant performance degradation and is robust to process variations like threshold voltage variations. We present simulation results in 0.18 μm technology and compare performance of our method with other static logic styles.
Details
Original language | English |
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Title of host publication | International Conference on Microelectronics (ICM) 2005 |
Pages | 102-105 |
Number of pages | 4 |
Publication status | Published - Dec 2005 |
Peer-reviewed | Yes |
Externally published | Yes |
Conference
Title | International Conference on Microelectronics 2005 |
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Abbreviated title | ICM 2005 |
Conference number | 17 |
Duration | 13 - 15 December 2005 |
City | Islamabad |
Country | Pakistan |
External IDs
Scopus | 33847095940 |
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