A new static high fan-in OR-NOR gate structure suitable for low power CMOS VLSI

Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/GutachtenBeitrag in KonferenzbandBeigetragenBegutachtung

Beitragende

Abstract

In this work we present a new technique for designing high fan-in OR/NOR gates, suitable for static full swing logic styles like SCMOS. This circuit consumes a little static power but its dynamic power consumption is very small. In 500 MHZ its total power consumption is 2.7 times smaller than the power consumption of SCMOS in equal delay condition. The area needed by this method is below half the area needed by DCVSL or SCMOS. This circuit can work in low voltage as low as 1 V without significant performance degradation and is robust to process variations like threshold voltage variations. We present simulation results in 0.18 μm technology and compare performance of our method with other static logic styles.

Details

OriginalspracheEnglisch
TitelInternational Conference on Microelectronics (ICM) 2005
Seiten102-105
Seitenumfang4
PublikationsstatusVeröffentlicht - Dez. 2005
Peer-Review-StatusJa
Extern publiziertJa

Konferenz

TitelInternational Conference on Microelectronics 2005
KurztitelICM 2005
Veranstaltungsnummer17
Dauer13 - 15 Dezember 2005
StadtIslamabad
LandPakistan

Externe IDs

Scopus 33847095940

Schlagworte

Forschungsprofillinien der TU Dresden