A new method for fast short circuit protection of IGBTs

Research output: Contribution to book/Conference proceedings/Anthology/ReportConference contributionContributedpeer-review

Contributors

Abstract

This paper presents a new, simple and low cost method for fast short circuit protection of IGBT modules. The principle of the method is to measure the voltage across the inductance between the power-emitter and the auxiliary-emitter. Moreover, by modulating the gate-signal, the new method reduces the gate emitter voltage Vge in order to limit the short circuit current and allows the semiconductor to be operated in the safe operation area. The new concept has been implemented in a gate unit, which is controlled by an FPGA. The performance of the gate unit has been verified in a buck converter with an IGBT module FF1400R12IP4 of 1400 A/1200 V.

Details

Original languageGerman
Title of host publicationIECON 2014 - 40th Annual Conference of the IEEE Industrial Electronics Society
PublisherIEEE
Pages1072-1076
Number of pages5
ISBN (print)978-1-4799-4032-5
Publication statusPublished - 1 Nov 2014
Peer-reviewedYes

Conference

Title40th Annual Conference of the IEEE Industrial Electronics Society
Abbreviated titleIECON 2014
Conference number40
Duration29 October - 1 November 2014
Website
Degree of recognitionInternational event
LocationSheraton Hotel Dallas
CityDallas
CountryUnited States of America

External IDs

Scopus 84983146285

Keywords

Keywords

  • Insulated gate bipolar transistors, Logic gates, Voltage control, Junctions, Current measurement, Voltage measurement, Standards