A new method for fast short circuit protection of IGBTs
Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review
Contributors
Abstract
This paper presents a new, simple and low cost method for fast short circuit protection of IGBT modules. The principle of the method is to measure the voltage across the inductance between the power-emitter and the auxiliary-emitter. Moreover, by modulating the gate-signal, the new method reduces the gate emitter voltage Vge in order to limit the short circuit current and allows the semiconductor to be operated in the safe operation area. The new concept has been implemented in a gate unit, which is controlled by an FPGA. The performance of the gate unit has been verified in a buck converter with an IGBT module FF1400R12IP4 of 1400 A/1200 V.
Details
Original language | German |
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Title of host publication | IECON 2014 - 40th Annual Conference of the IEEE Industrial Electronics Society |
Publisher | IEEE |
Pages | 1072-1076 |
Number of pages | 5 |
ISBN (print) | 978-1-4799-4032-5 |
Publication status | Published - 1 Nov 2014 |
Peer-reviewed | Yes |
Conference
Title | 40th Annual Conference of the IEEE Industrial Electronics Society |
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Abbreviated title | IECON 2014 |
Conference number | 40 |
Duration | 29 October - 1 November 2014 |
Website | |
Degree of recognition | International event |
Location | Sheraton Hotel Dallas |
City | Dallas |
Country | United States of America |
External IDs
Scopus | 84983146285 |
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Keywords
Keywords
- Insulated gate bipolar transistors, Logic gates, Voltage control, Junctions, Current measurement, Voltage measurement, Standards