A new method for fast short circuit protection of IGBTs

Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/GutachtenBeitrag in KonferenzbandBeigetragenBegutachtung

Beitragende

Abstract

This paper presents a new, simple and low cost method for fast short circuit protection of IGBT modules. The principle of the method is to measure the voltage across the inductance between the power-emitter and the auxiliary-emitter. Moreover, by modulating the gate-signal, the new method reduces the gate emitter voltage Vge in order to limit the short circuit current and allows the semiconductor to be operated in the safe operation area. The new concept has been implemented in a gate unit, which is controlled by an FPGA. The performance of the gate unit has been verified in a buck converter with an IGBT module FF1400R12IP4 of 1400 A/1200 V.

Details

OriginalspracheDeutsch
TitelIECON 2014 - 40th Annual Conference of the IEEE Industrial Electronics Society
Herausgeber (Verlag)IEEE
Seiten1072-1076
Seitenumfang5
ISBN (Print)978-1-4799-4032-5
PublikationsstatusVeröffentlicht - 1 Nov. 2014
Peer-Review-StatusJa

Konferenz

Titel40th Annual Conference of the IEEE Industrial Electronics Society
KurztitelIECON 2014
Veranstaltungsnummer40
Dauer29 Oktober - 1 November 2014
Webseite
BekanntheitsgradInternationale Veranstaltung
OrtSheraton Hotel Dallas
StadtDallas
LandUSA/Vereinigte Staaten

Externe IDs

Scopus 84983146285

Schlagworte

Schlagwörter

  • Insulated gate bipolar transistors, Logic gates, Voltage control, Junctions, Current measurement, Voltage measurement, Standards