A new method for fast short circuit protection of IGBTs
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
This paper presents a new, simple and low cost method for fast short circuit protection of IGBT modules. The principle of the method is to measure the voltage across the inductance between the power-emitter and the auxiliary-emitter. Moreover, by modulating the gate-signal, the new method reduces the gate emitter voltage Vge in order to limit the short circuit current and allows the semiconductor to be operated in the safe operation area. The new concept has been implemented in a gate unit, which is controlled by an FPGA. The performance of the gate unit has been verified in a buck converter with an IGBT module FF1400R12IP4 of 1400 A/1200 V.
Details
Originalsprache | Deutsch |
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Titel | IECON 2014 - 40th Annual Conference of the IEEE Industrial Electronics Society |
Herausgeber (Verlag) | IEEE |
Seiten | 1072-1076 |
Seitenumfang | 5 |
ISBN (Print) | 978-1-4799-4032-5 |
Publikationsstatus | Veröffentlicht - 1 Nov. 2014 |
Peer-Review-Status | Ja |
Konferenz
Titel | 40th Annual Conference of the IEEE Industrial Electronics Society |
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Kurztitel | IECON 2014 |
Veranstaltungsnummer | 40 |
Dauer | 29 Oktober - 1 November 2014 |
Webseite | |
Bekanntheitsgrad | Internationale Veranstaltung |
Ort | Sheraton Hotel Dallas |
Stadt | Dallas |
Land | USA/Vereinigte Staaten |
Externe IDs
Scopus | 84983146285 |
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Schlagworte
Schlagwörter
- Insulated gate bipolar transistors, Logic gates, Voltage control, Junctions, Current measurement, Voltage measurement, Standards