A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films

Research output: Contribution to journalResearch articleContributedpeer-review



A wakeup scheme for ferroelectric thin Hf0.5Zr0.5O2 films is presented, based on a gradual switching approach using multiple short pulses with a voltage amplitude roughly equal to the coercive voltage. This enables the on-chip wakeup and switching operation of ferroelectric devices, such as ferroelectric tunnel junctions (FTJs) with identical pulses. After wakeup using alternating pulse trains, which gradually switch the film polarization, FTJ operation is demonstrated to be as effective as after "normal"wakeup, with bipolar pulses of an amplitude larger than the coercive voltage. In this case, the voltage applied during wakeup was reduced by 26%, thereby lowering the required operating power.


Original languageEnglish
Article number022901
JournalApplied physics letters
Issue number2
Publication statusPublished - 10 Jan 2022

External IDs

Scopus 85123023249
WOS 000791375600013
Mendeley 455cbd89-59ed-3451-b32c-131c4014bb11


Library keywords