A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
A wakeup scheme for ferroelectric thin Hf0.5Zr0.5O2 films is presented, based on a gradual switching approach using multiple short pulses with a voltage amplitude roughly equal to the coercive voltage. This enables the on-chip wakeup and switching operation of ferroelectric devices, such as ferroelectric tunnel junctions (FTJs) with identical pulses. After wakeup using alternating pulse trains, which gradually switch the film polarization, FTJ operation is demonstrated to be as effective as after "normal"wakeup, with bipolar pulses of an amplitude larger than the coercive voltage. In this case, the voltage applied during wakeup was reduced by 26%, thereby lowering the required operating power.
Details
Original language | English |
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Article number | 022901 |
Journal | Applied physics letters |
Volume | 120 |
Issue number | 2 |
Publication status | Published - 10 Jan 2022 |
Peer-reviewed | Yes |
External IDs
Scopus | 85123023249 |
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WOS | 000791375600013 |
Mendeley | 455cbd89-59ed-3451-b32c-131c4014bb11 |