A Method for Producing an Organic Field Effect Transistor and an Organic Field Effect Transistor

Research output: Intellectual Property › Patent application/Patent

Contributors

  • Novaled GmbH

Abstract

The disclosure relates to a method for producing an organic field effect transistor, including providing a gate electrode and a gate insulator, depositing a first organic semiconducting layer on the gate insulator, generating a first electrode and an electrode insulator assigned to the first electrode for electrical insulation, depositing a second organic semiconducting layer on the first organic semiconducting layer and the electrode insulator, and generating a second electrode. Furthermore, an organic field effect transistor is provided.

Details

The disclosure relates to a method for producing an organic field effect transistor, including providing a gate electrode and a gate insulator, depositing a first organic semiconducting layer on the gate insulator, generating a first electrode and an electrode insulator assigned to the first electrode for electrical insulation, depositing a second organic semiconducting layer on the first organic semiconducting layer and the electrode insulator, and generating a second electrode. Furthermore, an organic field effect transistor is provided.

Original languageEnglish
IPC (International Patent Classification)H01L 51/ 10 A I
Patent numberUS2016049603
Country/TerritoryGermany
Priority date15 Apr 2014
Priority numberWO2014EP57651
Publication statusPublished - 18 Feb 2016
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External IDs

ORCID /0000-0002-9773-6676/work/142659823