A 50 Gbit/s transimpedance amplifier input stage implemented in a 0.13 μm SiGe BiCMOS technology with high gain-bandwidth product, high energy efficiency and low noise is presented. The amplifier is designed to act as an input stage of an integrated receiver front-end. The circuit consists of a low stage count topology and achieves a high transimpedance over a large bandwidth without applying area consuming peaking inductors. Measurements of the fabricated chip show a forward gain of more than 16 dB and a transimpedance gain of 53.5 dB over a bandwidth of 35 GHz. The circuit consumes a power of less than 14 mW from a 3.3 V supply and requires a chip area of only 0.158 mm ² including pads.