A FeFET-Based Hybrid Memory Accessible by Content and by Address

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

Abstract

Emerging nonvolatile memory technologies are attracting interest from the system design level to implement alternatives to conventional von-Neumann computing architectures. In particular, the hafnium oxide-based ferroelectric (FE) memory technology is fully CMOS-compatible and has already been used for logic-in-memory architectures or compact ternary content addressable memory (TCAM) cells. These enable the tight combination of different functionalities in the same circuit to reduce implementation area and energy consumption. In this article, we propose a new hybrid memory circuit that combines TCAM and normal memory capability: the Ternary Content addressable and MEMory (TC-MEM). A 1-bit TC-MEM circuit is proposed and discussed in detail, both as a concept and through its implementation in a 28-nm ferroelectric field-effect transistor (FeFET) technology. Measurement results demonstrate the circuit functionality. We also discuss how to scale it to multibit circuits, as well as its use both as a TCAM and as a normal memory allowing the implementation of reversible functions using one memory table instead of two memory tables, and in-memory-computing concepts.

Details

Original languageEnglish
Pages (from-to)19-26
Number of pages8
JournalIEEE journal on exploratory solid-state computational devices and circuits
Volume8
Issue number1
Publication statusPublished - 18 Apr 2022
Peer-reviewedYes

External IDs

Scopus 85129138840
Mendeley fd00e927-849c-3f20-af81-18f8ceee1717
WOS 000791755400001

Keywords

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Keywords

  • Ferroelectric field-effect transistor (FeFET), in-memory-computing (IMC), logic-in-memory, memory, ternary content addressable memory (TCAM)

Library keywords