This work presents the electrical characterization of sixteen different logic gates built entirely from three-independent-gate reconfigurable transistors. The circuits are fabricated on full-scale 300 mm wafers using the industrial 22 nm fully depleted silicon-on-insulator process of GlobalFoundries, with only minimal modifications to the baseline CMOS flow. The demonstrations include a reconfigurable 2-2 AND-OR-Inverter gate and a fully functional 1-bit adder comprising eight transistors. Quasi-static and transient on-wafer measurements confirm correct functionality and provide insight into the frequency limitations imposed by the current design and test setup. Finally, to explore scalability, a ripple-carry adder is simulated based on the experimentally realized 1-bit adder, illustrating how scaled devices and optimized layouts could enable low-power, CMOS-compatible applications.