A Comparative Study of Passive and Active Mixer Circuits in a Flexible a-IGZO TFT Technology
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Contributors
Abstract
This article presents a comparative study of both active and passive upconverter frequency mixers, integrated in an amorphous indium gallium zinc oxide (a-IGZO) technology. These flexible circuits, based on n-type thin-film transistors (TFTs), operate within the radio frequency (RF) industrial, scientific and medical (ISM) band of 13.56 MHz. The fabricated passive ring mixer shows a conversion loss of 6 dB while the active designs—differential pair (DP) and Gilbert cell (GC)—are optimized for approximately +5-dB conversion gain (CG) at a target frequency of 13.56 MHz and have a very low dc power of 95 and 248 μ W, respectively. In addition, a degenerated GC is implemented and compared with the other designs. To the best of our knowledge, these are the first fully integrated mixers reported in this type of flexible technology.
Details
Original language | English |
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Pages (from-to) | 58-64 |
Number of pages | 7 |
Journal | IEEE journal on flexible electronics |
Volume | 3 |
Issue number | 2 |
Early online date | 4 Oct 2023 |
Publication status | Published - Feb 2024 |
Peer-reviewed | Yes |
External IDs
ORCID | /0000-0002-4230-8228/work/144671236 |
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Mendeley | 9fc86715-ef40-371d-af45-647f945e271a |
unpaywall | 10.1109/jflex.2023.3322118 |
Scopus | 85214637124 |
Keywords
ASJC Scopus subject areas
Keywords
- Gilbert cell (GC), flexible electronics, indium gallium zinc oxide (IGZO), passive mixer, Active mixer