A Comparative Study of Passive and Active Mixer Circuits in a Flexible a-IGZO TFT Technology

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Abstract

This article presents a comparative study of both active and passive upconverter frequency mixers, integrated in an amorphous indium gallium zinc oxide (a-IGZO) technology. These flexible circuits, based on n-type thin-film transistors (TFTs), operate within the radio frequency (RF) industrial, scientific and medical (ISM) band of 13.56 MHz. The fabricated passive ring mixer shows a conversion loss of 6 dB while the active designs—differential pair (DP) and Gilbert cell (GC)—are optimized for approximately +5-dB conversion gain (CG) at a target frequency of 13.56 MHz and have a very low dc power of 95 and 248 μ W, respectively. In addition, a degenerated GC is implemented and compared with the other designs. To the best of our knowledge, these are the first fully integrated mixers reported in this type of flexible technology.

Details

OriginalspracheEnglisch
Seiten (von - bis)58-64
Seitenumfang7
FachzeitschriftIEEE journal on flexible electronics
Jahrgang3
Ausgabenummer2
Frühes Online-Datum4 Okt. 2023
PublikationsstatusVeröffentlicht - Feb. 2024
Peer-Review-StatusJa

Externe IDs

ORCID /0000-0002-4230-8228/work/144671236
Mendeley 9fc86715-ef40-371d-af45-647f945e271a
unpaywall 10.1109/jflex.2023.3322118
Scopus 85214637124

Schlagworte

Schlagwörter

  • Gilbert cell (GC), flexible electronics, indium gallium zinc oxide (IGZO), passive mixer, Active mixer