A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • Maximilian Gebhard - , Ruhr University Bochum (Author)
  • Felix Mitschker - , Ruhr University Bochum (Author)
  • Christian Hoppe - , Paderborn University (Author)
  • Morteza Aghaee - , Eindhoven University of Technology (Author)
  • Detlef Rogalla - , Ruhr University Bochum (Author)
  • Mariadriana Creatore - , Eindhoven University of Technology (Author)
  • Guido Grundmeier - , Paderborn University (Author)
  • Peter Awakowicz - , Ruhr University Bochum (Author)
  • Anjana Devi - , Ruhr University Bochum (Author)

Abstract

A combinatorial approach to deposit gas barrier layers (GBLs) on polyethylene terephthalate (PET) by means of plasma-enhanced chemical vapor deposition (PECVD) and plasma-enhanced atomic layer deposition (PEALD) is presented. Thin films of SiOx and SiOxCyHz obtained from PECVD were grown either subsequently on a PEALD seeding layer (SiO2) or were capped by ultrathin PEALD films of Al2O3 or SiO2. To study the impact of PEALD layers on the overall GBL performance, PECVD coatings with high macro defect densities and low barrier efficiency with regard to the oxygen transmission rate (OTR) were chosen. PEALD seeding layers demonstrated the ability to influence the subsequent PECVD growth in terms of the lower macro defect density (9 macro-defects mm−2) and improved barrier performance (OTR = 0.8 cm3 m−2 day−1), while the PEALD capping-route produced GBLs free of macro-defects.

Details

Original languageEnglish
Article number1700209
JournalPlasma processes and polymers
Volume15
Issue number5
Publication statusPublished - May 2018
Peer-reviewedYes
Externally publishedYes

Keywords

Keywords

  • cappings, gas barrier layers, PE-ALD, PE-CVD, seedings