A carbene stabilized precursor for the spatial atomic layer deposition of copper thin films
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
This paper demonstrates a carbene stabilized precursor [Cu(tBuNHC)(hmds)] with suitable volatility, reactivity and thermal stability, that enables the spatial plasma-enhanced atomic layer deposition (APP-ALD) of copper thin films at atmospheric pressure. The resulting conductive and pure copper layers were thoroughly analysed and a comparison of precursor and process with the previously reported silver analogue [Ag(tBuNHC)(hmds)] revealed interesting similarities and notable differences in precursor chemistry and growth characteristics. This first report of APP-ALD grown copper layers is an important starting point for high throughput, low-cost manufacturing of copper films for nano- and optoelectronic devices.
Details
Original language | English |
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Pages (from-to) | 13752-13755 |
Number of pages | 4 |
Journal | Chemical communications |
Volume | 56 |
Issue number | 89 |
Publication status | Published - 18 Nov 2020 |
Peer-reviewed | Yes |
Externally published | Yes |
External IDs
PubMed | 33063069 |
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