A carbene stabilized precursor for the spatial atomic layer deposition of copper thin films

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • Nils Boysen - , Ruhr University Bochum (Author)
  • Bujamin Misimi - , University of Wuppertal (Author)
  • Arbresha Muriqi - , University College Cork (Author)
  • Jan Lucas Wree - , Ruhr University Bochum (Author)
  • Tim Hasselmann - , University of Wuppertal (Author)
  • Detlef Rogalla - , Ruhr University Bochum (Author)
  • Tobias Haeger - , University of Wuppertal (Author)
  • Detlef Theirich - , University of Wuppertal (Author)
  • Michael Nolan - , University College Cork, Ulster University (Author)
  • Thomas Riedl - , University of Wuppertal (Author)
  • Anjana Devi - , Ruhr University Bochum (Author)

Abstract

This paper demonstrates a carbene stabilized precursor [Cu(tBuNHC)(hmds)] with suitable volatility, reactivity and thermal stability, that enables the spatial plasma-enhanced atomic layer deposition (APP-ALD) of copper thin films at atmospheric pressure. The resulting conductive and pure copper layers were thoroughly analysed and a comparison of precursor and process with the previously reported silver analogue [Ag(tBuNHC)(hmds)] revealed interesting similarities and notable differences in precursor chemistry and growth characteristics. This first report of APP-ALD grown copper layers is an important starting point for high throughput, low-cost manufacturing of copper films for nano- and optoelectronic devices.

Details

Original languageEnglish
Pages (from-to)13752-13755
Number of pages4
JournalChemical communications
Volume56
Issue number89
Publication statusPublished - 18 Nov 2020
Peer-reviewedYes
Externally publishedYes

External IDs

PubMed 33063069