A 60 GHz Up-Conversion Mixer in 22 nm FD-SOI CMOS with Back-Gate Mode Switching
Research output: Contribution to book/conference proceedings/anthology/report › Conference contribution › Contributed › peer-review
Contributors
Abstract
A 60 GHz direct up-conversion mixer in 22 nm FD-SOI is presented. Based on an output buffer with negative feedback, a 1-dB output compression point (Po1dB) of 0.4 dBm and a conversion gain of 4.5 dB are achieved. The required local oscillator (LO) power is only-11 dBm due to an LO buffer. Including the buffers, the total DC power is 18.6 mW. The circuit core occupies 0.12 mm2. Compared to state-of-The-Art CMOS mixers at 60 GHz, the circuit shows the highest Po1dB and the lowest LO power at high conversion gain. Moreover, for the first time, the switching between active and standby mode via back-gate biasing is investigated for such a mixer. The back-gate switching avoids the breakdown problems of front-gate switching.
Details
Original language | English |
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Title of host publication | 2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 5-7 |
Number of pages | 3 |
ISBN (electronic) | 979-8-3503-2440-2 |
Publication status | Published - 2023 |
Peer-reviewed | Yes |
Publication series
Series | IEEE International Workshop on Radio-Frequency Integration Technology (RFIT) |
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Conference
Title | 2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023 |
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Abbreviated title | RFIT 2023 |
Duration | 14 - 16 August 2023 |
Website | |
Location | Cairns Convention Centre |
City | Cairns |
Country | Australia |
External IDs
ORCID | /0000-0001-6778-7846/work/159607342 |
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ORCID | /0000-0003-1177-8750/work/159608405 |
Keywords
ASJC Scopus subject areas
Keywords
- 22 nm FD-SOI, 60 GHz, back-gate, CMOS, millimeter-wave, switchable, up-conversion mixer