A 60 GHz Up-Conversion Mixer in 22 nm FD-SOI CMOS with Back-Gate Mode Switching

Research output: Contribution to book/conference proceedings/anthology/reportConference contributionContributedpeer-review

Abstract

A 60 GHz direct up-conversion mixer in 22 nm FD-SOI is presented. Based on an output buffer with negative feedback, a 1-dB output compression point (Po1dB) of 0.4 dBm and a conversion gain of 4.5 dB are achieved. The required local oscillator (LO) power is only-11 dBm due to an LO buffer. Including the buffers, the total DC power is 18.6 mW. The circuit core occupies 0.12 mm2. Compared to state-of-The-Art CMOS mixers at 60 GHz, the circuit shows the highest Po1dB and the lowest LO power at high conversion gain. Moreover, for the first time, the switching between active and standby mode via back-gate biasing is investigated for such a mixer. The back-gate switching avoids the breakdown problems of front-gate switching.

Details

Original languageEnglish
Title of host publication2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages5-7
Number of pages3
ISBN (electronic)979-8-3503-2440-2
Publication statusPublished - 2023
Peer-reviewedYes

Publication series

SeriesIEEE International Workshop on Radio-Frequency Integration Technology (RFIT)

Conference

Title2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023
Abbreviated titleRFIT 2023
Duration14 - 16 August 2023
Website
LocationCairns Convention Centre
CityCairns
CountryAustralia

External IDs

ORCID /0000-0001-6778-7846/work/159607342
ORCID /0000-0003-1177-8750/work/159608405

Keywords

Keywords

  • 22 nm FD-SOI, 60 GHz, back-gate, CMOS, millimeter-wave, switchable, up-conversion mixer