A 60 GHz Up-Conversion Mixer in 22 nm FD-SOI CMOS with Back-Gate Mode Switching

Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/GutachtenBeitrag in KonferenzbandBeigetragenBegutachtung

Abstract

A 60 GHz direct up-conversion mixer in 22 nm FD-SOI is presented. Based on an output buffer with negative feedback, a 1-dB output compression point (Po1dB) of 0.4 dBm and a conversion gain of 4.5 dB are achieved. The required local oscillator (LO) power is only-11 dBm due to an LO buffer. Including the buffers, the total DC power is 18.6 mW. The circuit core occupies 0.12 mm2. Compared to state-of-The-Art CMOS mixers at 60 GHz, the circuit shows the highest Po1dB and the lowest LO power at high conversion gain. Moreover, for the first time, the switching between active and standby mode via back-gate biasing is investigated for such a mixer. The back-gate switching avoids the breakdown problems of front-gate switching.

Details

OriginalspracheEnglisch
Titel2023 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2023
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers Inc.
Seiten5-7
Seitenumfang3
ISBN (elektronisch)979-8-3503-2440-2
PublikationsstatusVeröffentlicht - 2023
Peer-Review-StatusJa

Publikationsreihe

ReiheIEEE International Workshop on Radio-Frequency Integration Technology (RFIT)

Konferenz

Titel2023 IEEE International Symposium on Radio-Frequency Integration Technology
KurztitelRFIT 2023
Dauer14 - 16 August 2023
Webseite
OrtCairns Convention Centre
StadtCairns
LandAustralien

Externe IDs

ORCID /0000-0001-6778-7846/work/159607342
ORCID /0000-0003-1177-8750/work/159608405

Schlagworte

Schlagwörter

  • 22 nm FD-SOI, 60 GHz, back-gate, CMOS, millimeter-wave, switchable, up-conversion mixer