A 1.8V 30nJ adaptive program-voltage (20V) generator for 3D-integrated NAND flash SSD

Research output: Contribution to book/Conference proceedings/Anthology/ReportConference contributionContributedpeer-review

Contributors

  • Koichi Ishida - , Chair of Circuit Design and Network Theory, Tokyo University of Agriculture (Author)
  • Tadashi Yasufuku - , Tokyo University of Agriculture (Author)
  • Shinji Miyamoto - , Toshiba Corporation (Author)
  • Hiroto Nakai - , Toshiba Corporation (Author)
  • Makoto Takamiya - , Tokyo University of Agriculture (Author)
  • Takayasu Sakurai - , Tokyo University of Agriculture (Author)
  • Ken Takeuchi - , Tokyo University of Agriculture (Author)

Abstract

Decreasing power consumption is the key design issue of SSDs. A typical SSD consists of more than 16 NAND Flash memories, DRAMs and a NAND controller. Since the NAND write performance is 10MB/s [1,2], to raise the write speed of SSD to the level of HDD, 100MB/s, 8 or more NAND chips in SSD are simultaneously programmed. As the feature size decreases, the total bitline capacitance in a chip increases beyond 200nF. If 8 or more NAND chips operate in parallel, a large current of 800mA flows to charge the bitline capacitance in a sub-30nm SSD [3]. A good strategy to decrease the power is lowering the supply voltage, VDD, from 3.3 to 1.8V. Yet, at 1.8V, the power consumption of conventional charge pumps, used to generate the 20V program voltage, VPGM, drastically increases and the total power consumption of the NAND does not decrease, as shown in Fig. 13.2.1(a). The charge-pump area more than doubles, which increases the NAND chip area by 5 to 10%. To overcome this problem, we implement a low-power program-voltage generator (PVG) using a boost converter with an adaptive-frequency and duty-cycle (AFD) controller.

Details

Original languageEnglish
Title of host publication2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages238-239
Number of pages2
ISBN (print)978-1-4244-3458-9
Publication statusPublished - 12 Feb 2009
Peer-reviewedYes

Conference

Title2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers
Duration8 - 12 February 2009
LocationSan Francisco, CA, USA

External IDs

Scopus 70349277452
ORCID /0000-0002-4152-1203/work/165453394

Keywords

Keywords

  • Frequency, Charge pumps, Flash memory, Circuits, Pulsed power supplies, Fluctuations, Voltage control, Inductors, Current measurement, Charge measurement