A 1.8V 30nJ adaptive program-voltage (20V) generator for 3D-integrated NAND flash SSD

Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/GutachtenBeitrag in KonferenzbandBeigetragenBegutachtung

Beitragende

  • Koichi Ishida - , Professur für Schaltungstechnik und Netzwerktheorie, Tokyo University of Agriculture (Autor:in)
  • Tadashi Yasufuku - , Tokyo University of Agriculture (Autor:in)
  • Shinji Miyamoto - , Toshiba Corporation (Autor:in)
  • Hiroto Nakai - , Toshiba Corporation (Autor:in)
  • Makoto Takamiya - , Tokyo University of Agriculture (Autor:in)
  • Takayasu Sakurai - , Tokyo University of Agriculture (Autor:in)
  • Ken Takeuchi - , Tokyo University of Agriculture (Autor:in)

Abstract

Decreasing power consumption is the key design issue of SSDs. A typical SSD consists of more than 16 NAND Flash memories, DRAMs and a NAND controller. Since the NAND write performance is 10MB/s [1,2], to raise the write speed of SSD to the level of HDD, 100MB/s, 8 or more NAND chips in SSD are simultaneously programmed. As the feature size decreases, the total bitline capacitance in a chip increases beyond 200nF. If 8 or more NAND chips operate in parallel, a large current of 800mA flows to charge the bitline capacitance in a sub-30nm SSD [3]. A good strategy to decrease the power is lowering the supply voltage, VDD, from 3.3 to 1.8V. Yet, at 1.8V, the power consumption of conventional charge pumps, used to generate the 20V program voltage, VPGM, drastically increases and the total power consumption of the NAND does not decrease, as shown in Fig. 13.2.1(a). The charge-pump area more than doubles, which increases the NAND chip area by 5 to 10%. To overcome this problem, we implement a low-power program-voltage generator (PVG) using a boost converter with an adaptive-frequency and duty-cycle (AFD) controller.

Details

OriginalspracheEnglisch
Titel2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers (IEEE)
Seiten238-239
Seitenumfang2
ISBN (Print)978-1-4244-3458-9
PublikationsstatusVeröffentlicht - 12 Feb. 2009
Peer-Review-StatusJa

Konferenz

Titel2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers
Dauer8 - 12 Februar 2009
OrtSan Francisco, CA, USA

Externe IDs

Scopus 70349277452
ORCID /0000-0002-4152-1203/work/165453394

Schlagworte

Schlagwörter

  • Frequency, Charge pumps, Flash memory, Circuits, Pulsed power supplies, Fluctuations, Voltage control, Inductors, Current measurement, Charge measurement