20.3dB 0.39mW AM Detector with Single-Transistor Active Inductor in Bendable a-IGZO TFT

Research output: Contribution to book/conference proceedings/anthology/reportConference contributionContributedpeer-review

Abstract

This paper presents an AM detector circuit in a bendable a-IGZO TFT technology. The circuit is based on a common-source stage loaded with a single-ended active inductor, which uses only one active transistor. This active inductor is the key element for the achieved circuit performance. The detector circuit consumes only 0.39 mW, which is almost a tenfold improvement over previous works in the same technology and crucial for mobile and wearable applications. At the same time it has the smallest chip area. The detector provides a conversion gain of 20.3 dB and an RF −3dB-bandwidth of around 7.5 MHz. At fc=13.56 MHz it has 11.6 dB gain, which also allows its use in this unlicensed ISM radio band for RFID and smart label applications.

Details

Original languageEnglish
Title of host publication42nd European Solid-State Circuits Conference (ESSCIRC) 2016
Pages79-82
Number of pages4
Publication statusPublished - Sept 2016
Peer-reviewedYes

Conference

Title42nd European Solid-State Circuits Conference
Abbreviated titleESSCIRC 2016
Conference number42
Duration12 - 15 September 2016
CityLausanne
CountrySwitzerland

External IDs

ORCID /0000-0001-6429-0105/work/129851033
ORCID /0000-0002-4230-8228/work/142251411
Scopus 84994472475
ORCID /0000-0002-4152-1203/work/165453368

Keywords

Research priority areas of TU Dresden

Keywords

  • 20.3dB 0.39mW AM Detector with Single-Transistor Active Inductor in Bendable a-IGZO TFT