20.3dB 0.39mW AM Detector with Single-Transistor Active Inductor in Bendable a-IGZO TFT
Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung
Beitragende
Abstract
This paper presents an AM detector circuit in a bendable a-IGZO TFT technology. The circuit is based on a common-source stage loaded with a single-ended active inductor, which uses only one active transistor. This active inductor is the key element for the achieved circuit performance. The detector circuit consumes only 0.39 mW, which is almost a tenfold improvement over previous works in the same technology and crucial for mobile and wearable applications. At the same time it has the smallest chip area. The detector provides a conversion gain of 20.3 dB and an RF −3dB-bandwidth of around 7.5 MHz. At fc=13.56 MHz it has 11.6 dB gain, which also allows its use in this unlicensed ISM radio band for RFID and smart label applications.
Details
Originalsprache | Englisch |
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Titel | 42nd European Solid-State Circuits Conference (ESSCIRC) 2016 |
Seiten | 79-82 |
Seitenumfang | 4 |
Publikationsstatus | Veröffentlicht - Sept. 2016 |
Peer-Review-Status | Ja |
Konferenz
Titel | 42nd European Solid-State Circuits Conference |
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Kurztitel | ESSCIRC 2016 |
Veranstaltungsnummer | 42 |
Dauer | 12 - 15 September 2016 |
Stadt | Lausanne |
Land | Schweiz |
Externe IDs
ORCID | /0000-0001-6429-0105/work/129851033 |
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ORCID | /0000-0002-4230-8228/work/142251411 |
Scopus | 84994472475 |
ORCID | /0000-0002-4152-1203/work/165453368 |
Schlagworte
Forschungsprofillinien der TU Dresden
Schlagwörter
- 20.3dB 0.39mW AM Detector with Single-Transistor Active Inductor in Bendable a-IGZO TFT