20.3dB 0.39mW AM Detector with Single-Transistor Active Inductor in Bendable a-IGZO TFT

Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/GutachtenBeitrag in KonferenzbandBeigetragenBegutachtung

Abstract

This paper presents an AM detector circuit in a bendable a-IGZO TFT technology. The circuit is based on a common-source stage loaded with a single-ended active inductor, which uses only one active transistor. This active inductor is the key element for the achieved circuit performance. The detector circuit consumes only 0.39 mW, which is almost a tenfold improvement over previous works in the same technology and crucial for mobile and wearable applications. At the same time it has the smallest chip area. The detector provides a conversion gain of 20.3 dB and an RF −3dB-bandwidth of around 7.5 MHz. At fc=13.56 MHz it has 11.6 dB gain, which also allows its use in this unlicensed ISM radio band for RFID and smart label applications.

Details

OriginalspracheEnglisch
Titel42nd European Solid-State Circuits Conference (ESSCIRC) 2016
Seiten79-82
Seitenumfang4
PublikationsstatusVeröffentlicht - Sept. 2016
Peer-Review-StatusJa

Konferenz

Titel42nd European Solid-State Circuits Conference
KurztitelESSCIRC 2016
Veranstaltungsnummer42
Dauer12 - 15 September 2016
StadtLausanne
LandSchweiz

Externe IDs

ORCID /0000-0001-6429-0105/work/129851033
ORCID /0000-0002-4230-8228/work/142251411
Scopus 84994472475

Schlagworte

Forschungsprofillinien der TU Dresden

Schlagwörter

  • 20.3dB 0.39mW AM Detector with Single-Transistor Active Inductor in Bendable a-IGZO TFT