16kbit HfO2:Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility
Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review
Contributors
Abstract
16kbit 1T-1C FeRAM arrays are demonstrated at 130nm node with TiN/Hf02:Si/TiN ferroelectric capacitors integrated in the Back-End-of-Line (BEOL). Zero bit failure is reported at the array level, with memory window fully open down to 2.5V programming voltage, capacitor area down to 0.16µm2and switching speed down to 4ns. Promising endurance is reported at the array level up to 107 cycles. For the first time, solder reflow compatibility is demonstrated for HfO2-based FeRAM. These results pave the way to competitive ultra-low power embedded non-volatile memories at more advanced nodes.
Details
| Original language | English |
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| Title of host publication | 2021 IEEE International Electron Devices Meeting, IEDM 2021 |
| Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| Pages | 33.1.1-33.1.4 |
| ISBN (electronic) | 9781665425728 |
| Publication status | Published - 2021 |
| Peer-reviewed | Yes |
Publication series
| Series | Technical Digest / International Electron Devices Meeting (IEDM) |
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| Volume | 2021-December |
| ISSN | 0163-1918 |
Conference
| Title | 2021 IEEE International Electron Devices Meeting |
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| Subtitle | Devices for a New Era of Electronics: From 2D Materials to 3D Architectures |
| Abbreviated title | IEDM 2021 |
| Conference number | 67 |
| Duration | 11 - 16 December 2021 |
| Location | Hilton San Francisco Union Square Hotel & online |
| City | San Francisco |
| Country | United States of America |
External IDs
| ORCID | /0000-0003-3814-0378/work/142256166 |
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