Using vertical capacitance-voltage measurements for fast on-wafer characterization of epitaxial GaN-on-Si material
Publikation: Beitrag in Fachzeitschrift › Forschungsartikel › Beigetragen › Begutachtung
Beitragende
Abstract
We propose and demonstrate an efficient approach to extract key parameters of GaN-based 2DEG heterostructures grown on conducting Silicon substrates. The methodology enables an electrical feedback on different epitaxial design or MOCVD growth conditions in a very short-time frame by means of vertical capacitance-voltage (C-V) measurement on simple gate-metal top-electrodes, which are evaporated through a shadow mask. Key parameters such as sheet charge carrier density of the 2DEG-channel, (AlGaN) barrier thickness between 2DEG and top-electrode and threshold voltage of 2DEG depletion can be extracted with minimum effort. All respective parameters can be logged across the entire wafer without the need for a sophisticated device process and reveal the lateral (in-) homogeneity of the wafer material. In addition, this method can be used to mimic the gate-module of metal-insulator-semiconductor (MIS)-HEMTs and, therefore, to study different charge-related properties of the dielectric-GaN interface or the dielectric layer itself.
Details
Originalsprache | Englisch |
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Seiten (von - bis) | 2897-2902 |
Seitenumfang | 6 |
Fachzeitschrift | Physica Status Solidi (A) Applications and Materials Science |
Jahrgang | 212 |
Ausgabenummer | 12 |
Publikationsstatus | Veröffentlicht - 1 Dez. 2015 |
Peer-Review-Status | Ja |
Externe IDs
ORCID | /0000-0003-3814-0378/work/142256281 |
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Schlagworte
ASJC Scopus Sachgebiete
Schlagwörter
- C-V characteristics, epitaxy, GaN, high-electron mobility transistors, MOCVD, wafer mapping