Ferroelectric (FE) hafnium zirconium oxide (HZO) is an excellent candidate for data storage applications. However, it has some reliability limitations such as imprint and retention. Herein, we explore Al doping of HZO to overcome these limitations. FE behavior is tuned by the aluminum (Al) concentrations in the films and by annealing temperature. A correlation is done between electrical behavior, crystallographic texture, and FE phases determined by grazing-incidence X-ray diffraction (GIXRD) measurements. Reduced coercive field (2E_c) values and wake-up free HZO-based ferroelectrics are explored. We show the tunability of remanent polarization (2P_r) and 2E_c with respect to Al-doping concentration and anneal temperature, hence crystallographic texture.