Spatially resolved cross-linking characterization by imaging low-coherence interferometry

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Beitragende

  • Christopher Taudt - , Westsächsische Hochschule Zwickau, Fraunhofer-Institut für Werkstoff- und Strahltechnik (Autor:in)
  • Bryan Nelsen - , Westsächsische Hochschule Zwickau, Fraunhofer-Institut für Werkstoff- und Strahltechnik (Autor:in)
  • Elisabeth Rossegger - , Montanuniversität Leoben (Autor:in)
  • Sandra Schlögl - , Montanuniversität Leoben (Autor:in)
  • Edmund Koch - , Klinik und Poliklinik für Anästhesiologie und Intensivtherapie (Autor:in)
  • Peter Hartmann - , Westsächsische Hochschule Zwickau, Fraunhofer-Institut für Werkstoff- und Strahltechnik (Autor:in)

Abstract

A method to characterize cross-linking differences in polymers such as waveguide polymers has been developed. The method is based on the scan-free information acquisition utilizing a low-coherence interferometer in conjunction with an imaging spectrometer. By the introduction of a novel analyzing algorithm, the recorded spectral-phase data was interpreted as wavelength-dependent optical thickness which is matchable with the refractive index and therefore with the degree of cross-linking. In the course of this work, the method was described in its hardware and algorithmic implementation as well as in its accuracy. Comparative measurements and error estimations showed an accuracy in the range of 10−6 in terms of the refractive index. Finally, photo-lithographically produced samples with laterally defined cross-linking differences have been characterized. It could be shown, that differences in the optical thickness of ±1.5 μm are distinguishable.

Details

OriginalspracheEnglisch
Aufsatznummer1152
FachzeitschriftSensors (Switzerland)
Jahrgang19
Ausgabenummer5
PublikationsstatusVeröffentlicht - 1 März 2019
Peer-Review-StatusJa

Externe IDs

PubMed 30866475
ORCID /0000-0003-0554-2178/work/142249908

Schlagworte

Schlagwörter

  • Cross-linking characterization, Dispersion-enhanced low-coherence interferometry, Interferometry, Photoresist, Semiconductor manufacturing, White-light interferometry