Rare Mononuclear Lithium–Carbene Complex for Atomic Layer Deposition of Lithium Containing Thin Films

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Beitragende

  • Jorit Obenlüneschloß - , Ruhr-Universität Bochum (Autor:in)
  • Nils Boysen - , Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme (Autor:in)
  • Karl Rönnby - , University College Cork (Autor:in)
  • Arbresha Muriqi - , University College Cork (Autor:in)
  • Volker Hoffmann - , Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden (Autor:in)
  • Carlos Abad - , Bundesanstalt für Materialforschung und -prüfung (BAM) (Autor:in)
  • Detlef Rogalla - , Ruhr-Universität Bochum (Autor:in)
  • Ulrike Brokmann - , Technische Universitat Ilmenau (Autor:in)
  • Edda Rädlein - , Technische Universitat Ilmenau (Autor:in)
  • Michael Nolan - , University College Cork (Autor:in)
  • Anjana Devi - , Professur für Materialchemie (gB/IFW), Ruhr-Universität Bochum, Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme, Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden (Autor:in)

Abstract

Lithium is the core material of modern battery technologies and fabricating the lithium-containing materials with atomic layer deposition (ALD) confers significant benefits in control of film composition and thickness. In this work, a new mononuclear N-heterocyclic carbene (NHC) stabilized lithium complex, [Li(tBuNHC)(hmds)], is introduced as a promising precursor for ALD of lithium-containing thin films. Structural characterization is performed, comparing density functional theory (DFT) and single-crystal X-ray diffraction (SC-XRD), confirming a rare mononuclear structure. Favorable thermal properties for ALD applications are evidenced by thermogravimetric analysis (TGA). The compound exhibits a low melting point, clean evaporation, and its volatility parameters are encouraging compared to other lithium precursors. ALD trials using [Li(tBuNHC)(hmds)] with ozone demonstrate its effectiveness in depositing LiSixOy films. The ALD process exhibits a saturated growth per cycle (GPC) of 0.95 Å. Compositional analysis using Rutherford backscattering spectrometry/nuclear reaction analysis (RBS/NRA), X-ray photoelectron spectrometry (XPS), and glow discharge optical emission spectrometry (GD-OES), confirms the presence of lithium and silicon in the expected ratios. This work not only presents a new ALD precursor but also contributes to the understanding of lithium chemistry, offering insights into the intriguing coordination chemistry and thermal behavior of lithium complexes stabilized by NHC ligands.

Details

OriginalspracheEnglisch
Aufsatznummere202513066
FachzeitschriftAngewandte Chemie - International Edition
Jahrgang64
Ausgabenummer47
PublikationsstatusVeröffentlicht - 17 Nov. 2025
Peer-Review-StatusJa

Externe IDs

PubMed 40908744

Schlagworte

ASJC Scopus Sachgebiete

Schlagwörter

  • Atomic layer deposition, Carbene ligands, Lithium, Precursor, Silicate