On-chip lateral Si:Te PIN photodiodes for room-temperature detection in the telecom optical wavelength bands

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Beitragende

Abstract

Photonic integrated circuits require photodetectors that operate at room temperature with sensitivity at telecom wavelengths and are suitable for integration with planar complementarymetal- oxide-semiconductor (CMOS) technology. Silicon hyperdoped with deep-level impurities is a promising material for silicon infrared detectors because of its strong room-temperature photoresponse in the short-wavelength infrared region caused by the creation of an impurity band within the silicon band gap. In this work, we present the first experimental demonstration of lateral Te-hyperdoped Si PIN photodetectors operating at room temperature in the optical telecom bands. We provide a detailed description of the fabrication process, working principle, and performance of the photodiodes, including their key figure of merits. Our results are promising for the integration of active and passive photonic elements on a single Si chip, leveraging the advantages of planar CMOS technology.

Details

OriginalspracheEnglisch
Seiten (von - bis)26451-26462
Seitenumfang12
FachzeitschriftOptics express
Jahrgang31
Ausgabenummer16
PublikationsstatusVeröffentlicht - 31 Juli 2023
Peer-Review-StatusJa

Externe IDs

PubMed 37710506