Finite element analysis of uniaxial bending of ultra-thin silicon dies embedded in flexible foil substrates

Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/GutachtenBeitrag in KonferenzbandBeigetragenBegutachtung

Beitragende

Abstract

We report a Finite Element Model to calculate the bending stress of thin and ultra-thin silicon dies embedded in flexible foil substrates (chip-in-foil package) at lower bending radii. The values of fracture strength computed using Finite Element Analysis showed very good agreement with the experimental results. Furthermore, an increase in the fracture or critical stress (bending stress at fracture) of the dies due to embedding in flexible foil substrates was observed. Besides, the impact of foil material and thickness on the bending stress of ultra-thin silicon die is discussed by comparing two foil materials: Stainless Steel and Polyimide.

Details

OriginalspracheDeutsch
Titel2015 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)
ErscheinungsortGlasgow
Herausgeber (Verlag)IEEE
Seiten137-140
Seitenumfang4
ISBN (elektronisch)978-1-4799-8229-5, 978-1-4799-8228-8
PublikationsstatusVeröffentlicht - 2 Juli 2015
Peer-Review-StatusJa

Publikationsreihe

ReihePh.D. Research in Microelectronics and Electronics (PRIME)
ISSN2641-5933

Konferenz

Titel2015 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)
Dauer29 Juni - 2 Juli 2015
OrtGlasgow, UK

Externe IDs

Scopus 84946846036
ORCID /0000-0002-0757-3325/work/139064859

Schlagworte

Schlagwörter

  • Silicon, Stress, Finite element analysis, Steel, Polyimides, Substrates, Flexible electronics