A Study on Imprint Behavior of Ferroelectric Hafnium Oxide Caused by High-Temperature Annealing

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Beitragende

Abstract

Hafnium oxide is found to be a favorable material for ferroelectric nonvolatile memory devices. Its compatibility with complementary metal–oxide–semiconductor processes, the relatively low crystallization temperature when zirconium-doped, and the thickness scaling are among the advantageous properties of hafnium oxide. Different requirements must be fulfilled for different applications of hafnium oxide. Herein, high-temperature annealing and operation conditions are analyzed in order to investigate nonvolatile memories for automotive applications. A strong imprint behavior (shift in coercive voltages) is observed after annealing hafnium–zirconium–oxide thin films at temperatures varied between 100 and 200 °C. The imprint behavior is a significant challenge in many applications. Therefore, to reduce/recover the undesirable imprint behavior caused by high-temperature treatment, two different ways are successfully examined and delineated here: endurance cycling and applying high electric fields.

Details

OriginalspracheEnglisch
Aufsatznummer2300067
Seitenumfang7
FachzeitschriftPhysica Status Solidi (A) Applications and Materials Science
Jahrgang220
Ausgabenummer7
PublikationsstatusVeröffentlicht - 7 Feb. 2023
Peer-Review-StatusJa

Externe IDs

Scopus 85149586152
ORCID /0000-0002-2484-4158/work/150330976

Schlagworte

Forschungsprofillinien der TU Dresden

Schlagwörter

  • ferroelectric, hafnium zirconium oxide, high-temperature reliability, imprint, memory