Very-low-operating-voltage organic light-emitting diodes using a p-doped amorphous hole injection layer
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
We demonstrate the use of a p-doped amorphous starburst amine, 4, 4', 4"-tris(N, N-diphenyl- amino)triphenylamine (TDATA), doped with a very strong acceptor, tetrafluoro- tetracyano-quinodimethane by controlled coevaporation as an excellent hole injection material for organic light-emitting diodes (OLEDs). Multilayered OLEDs consisting of double hole transport layers of p-doped TDATA and triphenyl-diamine, and an emitting layer of pure 8-tris-hydroxyquinoline aluminum exhibit a very low operating voltage (3.4 V) for obtaining 100 cd/m(2) even for a comparatively large (110 nm) total hole transport layer thickness. (C) 2001 American Institute of Physics.
Details
Original language | English |
---|---|
Article number | 410 |
Number of pages | 3 |
Journal | Applied physics letters |
Volume | 78 |
Issue number | 4 |
Publication status | Published - 22 Jan 2001 |
Peer-reviewed | Yes |
External IDs
Scopus | 0012393478 |
---|
Keywords
Keywords
- Electroluminescent devices, Highly efficient, Transport layer, Improved stability, Phthalocyanine, Molecules