Very-low-operating-voltage organic light-emitting diodes using a p-doped amorphous hole injection layer

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • X Zhou - (Author)
  • M Pfeiffer - (Author)
  • J Blochwitz - (Author)
  • A Werner - (Author)
  • A Nollau - (Author)
  • T Fritz - (Author)
  • K Leo - , Chair of Opto-Electronics (Author)

Abstract

We demonstrate the use of a p-doped amorphous starburst amine, 4, 4', 4"-tris(N, N-diphenyl- amino)triphenylamine (TDATA), doped with a very strong acceptor, tetrafluoro- tetracyano-quinodimethane by controlled coevaporation as an excellent hole injection material for organic light-emitting diodes (OLEDs). Multilayered OLEDs consisting of double hole transport layers of p-doped TDATA and triphenyl-diamine, and an emitting layer of pure 8-tris-hydroxyquinoline aluminum exhibit a very low operating voltage (3.4 V) for obtaining 100 cd/m(2) even for a comparatively large (110 nm) total hole transport layer thickness. (C) 2001 American Institute of Physics.

Details

Original languageEnglish
Article number410
Number of pages3
JournalApplied physics letters
Volume78
Issue number4
Publication statusPublished - 22 Jan 2001
Peer-reviewedYes

External IDs

Scopus 0012393478

Keywords

Keywords

  • Electroluminescent devices, Highly efficient, Transport layer, Improved stability, Phthalocyanine, Molecules