Verification of /spl pi/-equivalent circuit based microwave noise model on A/sub III/B/sub v/ HBTs with emphasis on HICUM
Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review
Contributors
Abstract
Analytical noise model for bipolar transistors, based on /spl pi/-hybrid equivalent circuit is verified on A/sub III/B/sub v/ HBTs. Equivalent circuit model parameters are obtained from detailed analysis of HICUM compact model. Since, new analytical model enables the evaluation of noise parameters just using external de-embedded y-parameters, obtained noise parameters are compared to those simulated with HICUM, and to other well known analytical noise equations. Good agreement over a wide range of measured noise parameters proves the model validity for the investigated A/sub III/B/sub v/ HBTs and enables a correct extraction of noise delay time, which is associated with base and base/collector space charge region transit time and determines the correlation between base and collector current shot noise.
Details
| Original language | German |
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| Title of host publication | IEEE MTT-S International Microwave Symposium Digest, 2005. |
| Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| Pages | 1419-1422 |
| Number of pages | 4 |
| ISBN (print) | 0-7803-8845-3 |
| Publication status | Published - 17 Jun 2005 |
| Peer-reviewed | Yes |
Conference
| Title | IEEE MTT-S International Microwave Symposium Digest, 2005. |
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| Duration | 17 June 2005 |
| Location | Long Beach, CA, USA |
External IDs
| Scopus | 33749257525 |
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Keywords
Keywords
- Microwave circuits, Circuit noise, Analytical models, Equivalent circuits, Bipolar transistors, Circuit simulation, Equations, Current measurement, Charge measurement, Noise measurement