Ultra-low voltage organic light-emitting diodes based on PiN structures
Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review
Contributors
Abstract
We demonstrate an efficient organic electroluminescent devices with p-i-n structure. Anamorphous starburst, 4,4',4"-tris(3-methylphenylphenylamino)triphenylamine doped with a strong organic acceptor, tetrafluoro-tetracyanoquinodimethane serves as the p-type hole transport layer, and 4,7-diphenyl-1,10-phenanthroline doped with Li as the n-type electron transport layer. A breakthrough is achived in the performances of device based on pure 8-trishydroxyquinoline as an emitter: 100 cd/m(2) at 2.52V, 1,000cd/m(2) at 2.9V and the maximum luminance and efficiency reache 66, 000cd/m(2) and 5.25 cd/A, respectively. The efficiency can be kept above 3 cd/A in a very large luminance region from 100 to 55,000 cd/m(2).
Details
Original language | German |
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Title of host publication | SPIE Proceedings |
Pages | 97-101 |
Number of pages | 5 |
Volume | 4642 |
Publication status | Published - 2002 |
Peer-reviewed | Yes |
Publication series
Series | Organic Optoelectronics and Photonics III |
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ISSN | 0277-786X |
External IDs
Scopus | 0036029287 |
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Keywords
Keywords
- Controlled doping, Low operating voltage, Organic electroluminescence