Ultra-low voltage organic light-emitting diodes based on PiN structures

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Contributors

Abstract

We demonstrate an efficient organic electroluminescent devices with p-i-n structure. Anamorphous starburst, 4,4',4"-tris(3-methylphenylphenylamino)triphenylamine doped with a strong organic acceptor, tetrafluoro-tetracyanoquinodimethane serves as the p-type hole transport layer, and 4,7-diphenyl-1,10-phenanthroline doped with Li as the n-type electron transport layer. A breakthrough is achived in the performances of device based on pure 8-trishydroxyquinoline as an emitter: 100 cd/m(2) at 2.52V, 1,000cd/m(2) at 2.9V and the maximum luminance and efficiency reache 66, 000cd/m(2) and 5.25 cd/A, respectively. The efficiency can be kept above 3 cd/A in a very large luminance region from 100 to 55,000 cd/m(2).

Details

Original languageGerman
Title of host publicationSPIE Proceedings
Pages97-101
Number of pages5
Volume4642
Publication statusPublished - 2002
Peer-reviewedYes

Publication series

SeriesOrganic Optoelectronics and Photonics III
ISSN0277-786X

External IDs

Scopus 0036029287

Keywords

Keywords

  • Controlled doping, Low operating voltage, Organic electroluminescence