Ultra Low Power < 9 nW Adaptive Duty Cycling Oscillator in 22 nm FDSOI CMOS Technology using Back Gate Biasing

Research output: Contribution to book/Conference proceedings/Anthology/ReportConference contributionContributedpeer-review

Abstract

An ultra low power ring oscillator with less than 9nW of DC power at a supply of 0.5 V for generating duty cycle signals for wake-up receivers is presented. It uses the possibility of FDSOI technologies to bias the transistor back gate separately to change the frequency in a wide range from 7..62 kHz and pulse time within 90..240 ns. The circuit has a good compensation of drain current over temperature, which stabilizes the frequency and pulse time. The circuit is fabricated in a 22 nm FDSOI technology. The core area occupies only 40 μm × 80 μm.

Details

Original languageEnglish
Title of host publication2021 IEEE 12th Latin American Symposium on Circuits and Systems, LASCAS 2021
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
ISBN (electronic)978-1-7281-7670-3
ISBN (print)978-1-7281-7671-0
Publication statusPublished - 21 Feb 2021
Peer-reviewedYes

Conference

Title12th IEEE Latin American Symposium on Circuits and Systems
Abbreviated titleLASCAS 2021
Conference number12
Duration22 - 25 February 2021
LocationOnline
CityArequipa
CountryPeru

Keywords

Keywords

  • 22 nm FDSOI, Clock generator, CMOS integrated circuits, low power, low voltage, low-power wireless, sensor networks, wake-up radios, wake-up receivers