Tools and strategies to optimize the electrical and mechanical properties of flexible IGZO TFTs

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Contributors

Abstract

In this paper, we present thin-film transistors based on oxide semiconductors -in particular amorphous InGaZnO- and fabricated on large-area plastic substrates. The TFTs shown here are fully operational when wrapped around a hair, and exhibit DC and AC performance outperforming many other flexible technologies, yielding for example a maximum oscillation frequency >300 MHz. Here, device structures, simulation models, and circuit topologies to realize analog circuits insensitive to strain are demonstrated. These strategies result in integrated amplifiers made from >10 transistors which are not influenced by bending while providing voltage gain >19 dB.

Details

Original languageEnglish
Title of host publication11th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (IEEE CAD-TFT) 2020
Publication statusPublished - Nov 2020
Peer-reviewedYes

Conference

Title11th International Conference on Computer Aided Design for Thin-Film Transistor Technologies
Abbreviated titleCAD-TFT 2020
Conference number11
Duration10 - 11 November 2020
Locationonline

External IDs

ORCID /0000-0001-6429-0105/work/129851038
ORCID /0000-0002-4152-1203/work/165453350

Keywords

Research priority areas of TU Dresden