In this paper, we present thin-film transistors based on oxide semiconductors -in particular amorphous InGaZnO- and fabricated on large-area plastic substrates. The TFTs shown here are fully operational when wrapped around a hair, and exhibit DC and AC performance outperforming many other flexible technologies, yielding for example a maximum oscillation frequency >300 MHz. Here, device structures, simulation models, and circuit topologies to realize analog circuits insensitive to strain are demonstrated. These strategies result in integrated amplifiers made from >10 transistors which are not influenced by bending while providing voltage gain >19 dB.
|Title of host publication||11th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (IEEE CAD-TFT) 2020|
|Publication status||Published - Nov 2020|
|Title||11th International Conference on Computer Aided Design for Thin-Film Transistor Technologies|
|Abbreviated title||CAD-TFT 2020|
|Duration||10 - 11 November 2020|