Tools and strategies to optimize the electrical and mechanical properties of flexible IGZO TFTs
Research output: Contribution to book/conference proceedings/anthology/report › Conference contribution › Contributed › peer-review
Contributors
Abstract
In this paper, we present thin-film transistors based on oxide semiconductors -in particular amorphous InGaZnO- and fabricated on large-area plastic substrates. The TFTs shown here are fully operational when wrapped around a hair, and exhibit DC and AC performance outperforming many other flexible technologies, yielding for example a maximum oscillation frequency >300 MHz. Here, device structures, simulation models, and circuit topologies to realize analog circuits insensitive to strain are demonstrated. These strategies result in integrated amplifiers made from >10 transistors which are not influenced by bending while providing voltage gain >19 dB.
Details
Original language | English |
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Title of host publication | 11th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (IEEE CAD-TFT) 2020 |
Publication status | Published - Nov 2020 |
Peer-reviewed | Yes |
Conference
Title | 11th International Conference on Computer Aided Design for Thin-Film Transistor Technologies |
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Abbreviated title | CAD-TFT 2020 |
Conference number | 11 |
Duration | 10 - 11 November 2020 |
Location | online |
External IDs
ORCID | /0000-0001-6429-0105/work/129851038 |
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ORCID | /0000-0002-4152-1203/work/165453350 |