Semimetallic MoTe2 has recently generated enormous attention due to its topological properties, large magnetoresistance, superconductivity, suitability for homojunction phase patterning, and, in particular, metal-insulator transition of thin layers, possibly indicating a quantum spin hall state. These observations prove the potential of MoTe2 for thin film applications and call for systematic investigations of the thickness dependent electronic structure. Here we apply angle-resolved photoemission spectroscopy supported by band structure calculations to elucidate the electronic structure of exfoliated 1T′-MoTe2. Electron and hole pockets of the inverted conduction and valence bands near Γ are resolved down to the monolayer. The Fermi level of exfoliated 1T′-MoTe2 monolayers lays within the electron pockets indicating intrinsic n-type doping. EF shifts downward with increasing thickness consistent with a surface driven mechanism. Our study provides insight on the electronic properties of semimetallic 1T′-MoTe2 as an indispensable ingredient for future thin film functionalization.