Systematic Compact Modeling of Correlated Noise in Bipolar Transistors
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
A systematic method for the integration of correlated shot-noise sources into compact models (CMs) is presented, which significantly improves the accuracy of predicted high-frequency noise in transistors. The developed method relies on a system theory approach, and hence, is not limited to specific CM or device type. In this paper, the method is applied to the CM HICUM, which serves a vehicle for verification purposes. The method and its implementation were verified for SiGe heterojunction bipolar transistors based on measured data for frequencies up to 50 GHz, as well as on device simulation data up to 500 GHz, obtained from simulations of both hydrodynamic and a Boltzmann transport model.
Details
Original language | German |
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Article number | 6304942 |
Pages (from-to) | 3403-3412 |
Number of pages | 10 |
Journal | IEEE transactions on microwave theory and techniques |
Volume | 60 |
Issue number | 11 |
Publication status | Published - 1 Nov 2012 |
Peer-reviewed | Yes |
External IDs
Scopus | 84869232589 |
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Keywords
Keywords
- Noise, Mathematical model, Heterojunction bipolar transistors, Silicon germanium, Correlation, Delay, Integrated circuit modeling