Survey of Distributed Amplifiers with >100 GHz Bandwidth and Link-Budget Estimations for Short-Range Wireless up to 0.5 Tbit/s

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Contributors

Abstract

In this paper, a survey of leading-edge distributed amplifiers is given. The measurements of our CMOS (Complementary Metal Oxide Semiconductor) and SiGe BiCMOS (Silicon Germanium Bipolar CMOS) amplifiers show bandwidths of 110 GHz and 180 GHz, and gains of 8.5 dB and 18.7 dB, respectively. The link-budget and strategies for short-range wireless communication up to 0.5 Tbit/s are discussed.

Details

Original languageEnglish
Title of host publication2019 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference, IMOC 2019
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
ISBN (electronic)9781728130996
Publication statusPublished - 10 Nov 2019
Peer-reviewedYes

Publication series

SeriesSBMO/IEEE MTT-S International Conference on Microwave and Optoelectronics (IMOC)
Volume2019-January

Conference

Title2019 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference
Abbreviated titleIMOC 2019
Conference number18
Duration10 - 14 November 2019
Website
Degree of recognitionInternational event
LocationUniversity of Aveiro
CityAveiro
CountryPortugal

Keywords

Keywords

  • distributed amplifiers, sub-Tbit/s, traveling wave amplifiers, ultra-broadband, wireless communications