Surface electronic structure of epitaxial Ce and La films
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
We report on a detailed photoemission (PE) study of monocrystalline Ce and La metal films grown on W(110). Angle-resolved PE reveals that both systems have very similar valence-band structures, with the observed dispersions being in good agreement with local-density approximation band-structure calculations. These calculations were performed for three different close-packed crystal structures of La and Ce metal, giving evidence for a double hcp structure of the films, i.e., a beta phase in the case of Ce. The pronounced surface state, characteristic for the close-packed surfaces of trivalent lanthanide metals, is shown to exist also for beta-Ce(0001), extending over a wide range of the surface Brillouin zone. The 4f electronic structure of the Ce film was studied by resonant PE at the 4d --> 4f threshold. A separation of bulk and surface contributions with high resolution was achieved by quenching the surface signal with a Dy overlayer. In this way, a surface shift of (140 +/- 40) meV of the 4f(0) final state emission was found for beta-Ce, which is discussed in connection with f - d hybridization.
Details
Original language | English |
---|---|
Pages (from-to) | 3682-3689 |
Number of pages | 8 |
Journal | Physical Review B |
Volume | 58 |
Issue number | 7 |
Publication status | Published - 15 Aug 1998 |
Peer-reviewed | Yes |
External IDs
Scopus | 0001686531 |
---|
Keywords
Keywords
- Resolved resonant photoemission, Low-energy excitations, Core-level shifts, Lanthanide metals, Alpha-ce, Gamma-ce, Gamma->alpha transition, Model calculation, Impurity model, Cerium