Atomic layer deposition of cobalt oxide thin films is crucial for various applications in microelectronics, energy storage, and catalysis. However, challenges such as slow deposition rates and island growth have limited its widespread adoption. This work investigates a novel supercycle approach combining thermal and plasma-enhanced atomic layer deposition to address these issues and optimize cobalt oxide film growth. This study explores the effects of varying thermal-to-plasma ratios on film morphology, composition, and growth characteristics. The results demonstrate that increasing plasma exposure leads to higher growth rates, thicker films, and changes in surface roughness and porosity. X-ray photoemission spectroscopy reveals the presence of multiple cobalt species, including oxides and hydroxides, whose ratios vary with plasma exposure. Surprisingly, carbon content in the films increases with higher plasma amounts despite the use of ozone as an oxidizer. The study also observes a logarithmic decrease in the cobalt-to-oxygen ratio with increasing plasma exposure, attributed to the potential sputtering effects from argon in the plasma mixture. These findings provide unique insights into the complex interplay between plasma parameters and film characteristics in atomic layer deposition processes, offering new avenues for tailoring cobalt oxide thin films for specific applications.