Recent advances using guanidinate ligands for Chemical Vapour Deposition (CVD) and Atomic Layer Deposition (ALD) applications

Research output: Contribution to journalReview articleContributedpeer-review


  • Agnieszka Kurek - , Carleton University (Author)
  • Peter G. Gordon - , Carleton University (Author)
  • Sarah Karle - , Ruhr University Bochum (Author)
  • Anjana Devi - , Ruhr University Bochum (Author)
  • Seán T. Barry - , Carleton University (Author)


Volatile metal complexes are important for chemical vapour deposition (CVD) and atomic layer deposition (ALD) to deliver metal components to growing thin films. Compounds that are thermally stable enough to volatilize but that can also react with a specific substrate are uncommon and remain unknown for many metal centres. Guanidinate ligands, as discussed in this review, have proven their utility for CVD and ALD precursors for a broad range of metal centres. Guanidinate complexes have been used to deposit metal oxides, metal nitrides and pure metal films by tuning process parameters. Our review highlights use of guanidinate ligands for CVD and ALD of thin films over the past five years, design trends for precursors, promising precursor candidates and discusses the future outlook of these ligands.


Original languageEnglish
Pages (from-to)989-996
Number of pages8
JournalAustralian journal of chemistry
Issue number7
Publication statusPublished - 2014
Externally publishedYes


ASJC Scopus subject areas