Realization of organic pn-homojunction using a novel n-type doping technique
Research output: Contribution to book/conference proceedings/anthology/report › Conference contribution › Contributed › peer-review
Contributors
Abstract
We present a novel n-type doping technique for organic semiconductors using the metal complex bis(terpyridine)ruthenium as a strong donor. Owing to its low oxidation potential, the reduced neutral form of the donor complex allows an electron transfer to the matrix. This enables n-type conduction that has been seldom reported in metallophthalocyanine systems doped with organic compounds. The n-type zinc-phthalocyanine layers are characterized by the conductivity and the field-effect measurements. By sequential coevaporation of p- and n-doped layers, we have prepared the first stable and reproducible organic homojunction of zinc-phthalocyanine. The diode exhibits surprisingly high built-in voltage attractive e.g. for organic solar cell applications. The temperature dependence of the current-voltage characteristics does not follow the standard Shockley theory of pn-junctions. We explain the behavior of the ideality factor and the saturation current by deviations from the classical Einstein relation at low temperatures.
Details
Original language | German |
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Title of host publication | Organic Optoelectronics and Photonics III |
Pages | 1-9 |
Number of pages | 9 |
Volume | 5464 |
Publication status | Published - 2004 |
Peer-reviewed | Yes |
Publication series
Series | Proceedings of SPIE - The International Society for Optical Engineering |
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ISSN | 0277-786X |
External IDs
Scopus | 10044236691 |
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Keywords
Keywords
- Einstein relation, ZnPc, Complex, Disordered systems, Donor, Homojunction, Mobility, N-type, Organic