Power Semiconductor Loss Comparison of Low-Voltage, High-Power Two-Level and Three-Level Voltage Source Converters

Research output: Contribution to book/conference proceedings/anthology/reportConference contributionContributedpeer-review

Abstract

For industrial low-voltage, high-power applications, the two-level voltage source converter (2L-VSC) is still the most common topology for machine-side and grid-side converters. With an ongoing development towards higher overall system efficiency, grid code requirements and the increasing availability of three-level low-voltage IGBT1-modules, three-level voltage source converter (3L-VSC) topologies become attractive as viable alternatives. As a first step towards a wider system-level comparison, this paper presents investigation results regarding the active power electronics part of the converter. This incorporates a deeper analysis and comparison of the IGBT-module losses and current capabilities of 400 V 2L- and 3L-VSCs for characteristic converter operating conditions and different modulation schemes (e.g. continuous and discontinuous space vector modulation).

Details

Original languageEnglish
Title of host publicationProceedings of PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
PublisherVDE Verlag, Berlin [u. a.]
Pages1-9
Number of pages9
ISBN (print)978-3-8007-3924-0
Publication statusPublished - 20 May 2015
Peer-reviewedYes

Conference

Title2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
Abbreviated titlePCIM Europe 2015
Duration19 - 20 May 2015
LocationMesse Nürnberg
CityNürnberg
CountryGermany

External IDs

Scopus 84997113349