Photoluminescence study of (GaIn)As/(AlIn)As-based THz antenna materials for 1.55 μm excitation

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

  • T. Jung - , University of Marburg (Author)
  • R. Dietz - , Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute (Author)
  • A. Chernikov - , University of Marburg (Author)
  • F. Kuik - , University of Marburg (Author)
  • B. Sartorius - , Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute (Author)
  • M. Schell - , Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute (Author)
  • M. Koch - , University of Marburg (Author)
  • S. Chatterjee - , University of Marburg (Author)

Abstract

The influence of localization and disorder in (GaIn)As/(AlIn)As heterostructures with spatially separated photoconductive and recombination regions designed as a material for THz antennas for telecom applications at 1.55μm is investigated by photoluminescence spectroscopy. The emission is studied as a function of lattice temperature for a series of samples with different growth temperatures. Strain-induced disorder is identified as the main contribution to carrier localization. In addition, inhomogeneous broadening as well as PL intensity is strongly influenced by the impurity density in the barrier material. The optimal configuration as THz antenna material is achieved at a growth temperature of 375 °C.

Details

Original languageEnglish
Pages (from-to)179-181
Number of pages3
JournalJournal of luminescence
Volume138
Publication statusPublished - 2013
Peer-reviewedYes
Externally publishedYes

Keywords

ASJC Scopus subject areas

Keywords

  • Disorder, III-V semiconductors, Photoluminescence, THz-emitters