Oxidation behaviour of Ti 2AlN films composed mainly of nanolaminated MAX phase

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

  • Q. M. Wang - , Brandenburg University of Technology, CAS - Institute of Metal Research, Pusan National University (Author)
  • W. Garkas - , Brandenburg University of Technology (Author)
  • A. Flores Renteria - , Brandenburg University of Technology (Author)
  • C. Leyens - , Institute of Materials Science, Chair of Materials Technology, Physical Metallurgy and Materials Technology, Brandenburg University of Technology, TUD Dresden University of Technology (Author)
  • K. H. Kim - , Pusan National University (Author)

Abstract

In this paper, we reported the oxidation behaviour of Ti 2AlN films on polycrystalline Al 2O 3 substrates. The Ti 2AlN films composed mainly of nanolaminated MAX phase was obtained by first depositing Ti-Al-N films using reactive sputtering of two elemental Ti and Al targets in Ar/N 2 atmosphere and subsequent vacuum annealing at 800 °C for 1 h. The Ti 2AlN films exhibited excellent oxidation resistance and thermal stability at 600-900 °C in air. Very low mass gain was observed. At low temperature (600 °C), no oxide crystals were observed on film surface. Blade-like θ-Al 2O 3 fine crystals formed on film surfaces at 700-800 °C. At high temperature (900 °C), firstly θ-Al 2O 3 formed on film surface and then transformed into α-Al 2O 3. At 700-900 °C, a continuous Al 2O 3 layer formed on Ti 2AlN films surface, acting as diffusion barrier preventing further oxidation attack. The mechanism of the excellent oxidation resistance of Ti 2AlN films was discussed based on the experimental results.

Details

Original languageEnglish
Pages (from-to)8959-8966
Number of pages8
JournalJournal of nanoscience and nanotechnology
Volume11
Issue number10
Publication statusPublished - 2011
Peer-reviewedYes

Keywords

ASJC Scopus subject areas

Keywords

  • Films, Nanolaminated MAX Phase, Oxidation, Ti AlN