Organic Zener Diodes: Tunneling across the Gap in Organic Semiconductor Materials
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
Organic Zener diodes with a precisely adjustable reverse breakdown from -3 to -15 V without any influence on the forward current-voltrage curve are realized This is accomplished by controlling the width of the charge depletion zone in a pin diode with an accuracy of one nanometer independently of the doping concentration and the thickness of the intrinsic layer The breakdown effect with its exponential current voltage behavior and a weak temperature dependence is explained by a tunneling mechanism across the highest occupied molecular orbital lowest unoccupied molecular orbital gap of neighboring molecules The experimental data are confirmed by a minimal Hamiltonian model approach including coherent tunneling and incoherent hopping processes as possible charge transport pathways through the effective device region
Details
Original language | English |
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Pages (from-to) | 4929-4934 |
Number of pages | 6 |
Journal | Nano letters |
Volume | 10 |
Issue number | 12 |
Publication status | Published - Dec 2010 |
Peer-reviewed | Yes |
External IDs
PubMed | 21033756 |
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Scopus | 78650134578 |
ORCID | /0000-0001-8121-8041/work/142240852 |
ORCID | /0000-0002-9773-6676/work/142247058 |
Keywords
Keywords
- Organic semiconductors, Zener diodes, Molecular doping tunneling, Organic pin diodes