Organic semiconductor growth and morphology considerations for organic thin-film transistors

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • Ajay A. Virkar - , Stanford University (Author)
  • Stefan Mannsfeld - , Stanford University, SLAC National Accelerator Laboratory (Author)
  • Zhenan Bao - , Stanford University (Author)
  • Natalie Stingelin - , Imperial College London (Author)

Abstract

Analogous to conventional inorganic semiconductors, the performance of organic semiconductors is directly related to their molecular packing, crystal- linity, growth mode, and purity. In order to achieve the best possible performance, it is critical to understand how organic semiconductors nucleate and grow. Clever use of surface and dielectric modification chemistry can allow one to control the growth and morphology, which greatly influence the electrical properties of the organic transistor. In this Review, the nucleation and growth of organic semiconductors on dielectric surfaces is addressed. The first part of the Review concentrates on small-molecule organic semiconductors. The role of deposition conditions on film formation is described. The modification of the dielectric interface using polymers or self-assembled monolayers and their effect on organic-semiconductor growth and performance is also discussed. The goal of this Review is primarily to discuss the thin-film formation of organic semiconducting species. The patterning of single crystals is discussed, while their nucleation and growth has been described elsewhere (see the Review by Liu et. al).[] The second part of the Review focuses on polymeric semiconductors. The dependence of physicochemical properties, such as chain length (i.e., molecular weight) of the constituting macromolecule, and the influence of small molecular species on, e.g., melting temperature, as well as routes to induce order in such macro- molecules, are described.

Details

Original languageEnglish
Pages (from-to)3857-3875
Number of pages19
JournalAdvanced materials
Volume22
Issue number34
Publication statusPublished - 16 Aug 2010
Peer-reviewedYes
Externally publishedYes

External IDs

PubMed 20715062