Noise modeling of advanced technology high speed SiGe HBTs

P. Sakalas; J. Herricht; M. Ramonas; M. Schroter

doi:10.1109/BIPOL.2010.5667943

Noise modeling of advanced technology high speed SiGe HBTs

Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review

Contributors

P. Sakalas - , Chair of Electron Devices and Integrated Circuits, Center for Physical Sciences and Technology (Author)
J. Herricht - , Chair of Electron Devices and Integrated Circuits (Author)
M. Ramonas - , Bundeswehr University of Munich (Author)
M. Schroter - , University of California at Irvine (Author)

Abstract

Noise parameters of SiGe HBTs fabricated in different technologies were measured in the 1-26 GHz frequency range. The standard dc, ac characteristics and noise parameters were compared to the compact model HICUM. Very good agreement was obtained for all technologies. The noise parameters were simulated with a new systematic noise correlation model, implemented and realized in HICUM via Verilog-A. The model was verified up to 500 GHz against TCAD simulations and Boltzman Transport equation solution method. The compact realization of the new noise correlation model is applicable to all SPICE-like circuit simulators.

Details

Original language	English
Title of host publication	2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	169-172
Number of pages	4
ISBN (print)	978-1-4244-8577-2
Publication status	Published - 6 Oct 2010
Peer-reviewed	Yes

Conference

Title	2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
Duration	4 - 6 October 2010
Location	Austin, TX, USA

External IDs

Scopus	78651392525

Keywords

Noise, Silicon germanium, Correlation, Integrated circuit modeling, Heterojunction bipolar transistors, Solid modeling, High definition video

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Abstract

Details

Conference

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Keywords

Keywords