Nanoporous and highly active silicon carbide supported ceo 2-catalysts for the methane oxidation reaction
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
CeOx@SiO2 nanoparticles are used for the first time for the generation of porous SiC materials with tailored pore diameter in the mesopore range containing encapsulated and catalytically active CeO2 nanoparticles. The nanocasting approach with a preceramic polymer and subsequent pyrolysis is performed at 1300 °C, selective leaching of the siliceous part results in CeOx/SiC catalysts with remarkable characteristics like monodisperse, spherical pores and specific surface areas of up to 438 m 2·g-1. Porous SiC materials are promising supports for high temperature applications. The catalysts show excellent activities in the oxidation of methane with onset temperatures of the reaction 270 K below the onset of the homogeneous reaction. The synthesis scheme using core-shell particles is suited to functionalize silicon carbide with a high degree of stabilization of the active nanoparticles against sintering in the core of the template even at pyrolysis temperatures of 1300 °C rendering the novel synthesis principle as an attractive approach for a wide range of catalytic reactions. In situ functionalization towards silicon carbide supported catalysts with core-shell nanoparticles (CeOx@SiO2) is achieved using a nanocasting approach. A high catalytic activity due to the integration of active CeOx nanoparticles is observed without sintering even at pyrolysis temperatures of 1300 °C. The novel synthesis route is a general strategy for the integration of active nanoparticles into porous non-oxide supports.
Details
Original language | English |
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Pages (from-to) | 316-322 |
Number of pages | 7 |
Journal | Small |
Volume | 10 |
Issue number | 2 |
Publication status | Published - 29 Jan 2014 |
Peer-reviewed | Yes |
Keywords
ASJC Scopus subject areas
Keywords
- ceria, core-shell particles, functionalization, methane oxidation, silicon carbide