Nanographene-Based Heterojunctions for High-Performance Organic Phototransistor Memory Devices

Research output: Contribution to journalResearch articleContributedpeer-review



Organic phototransistors can enable many important applications such as nonvolatile memory, artificial synapses, and photodetectors in next-generation optical communication and wearable electronics. However, it is still a challenge to achieve a big memory window (threshold voltage response ∆Vth) for phototransistors. Here, a nanographene-based heterojunction phototransistor memory with large ∆Vth responses is reported. Exposure to low intensity light (25.7 µW cm−2) for 1 s yields a memory window of 35 V, and the threshold voltage shift is found to be larger than 140 V under continuous light illumination. The device exhibits both good photosensitivity (3.6 × 105) and memory properties including long retention time (>1.5 × 105 s), large hysteresis (45.35 V), and high endurance for voltage-erasing and light-programming. These findings demonstrate the high application potential of nanographenes in the field of optoelectronics. In addition, the working principle of these hybrid nanographene-organic structured heterojunction phototransistor memory devices is described which provides new insight into the design of high-performance organic phototransistor devices.


Original languageEnglish
Article number2300057
Number of pages12
JournalAdvanced science
Issue number15
Early online date30 Mar 2023
Publication statusPublished - 26 May 2023

External IDs

WOS 000961681500001
PubMed 36995051
ORCID /0000-0002-8487-0972/work/142247551


DFG Classification of Subject Areas according to Review Boards

Subject groups, research areas, subject areas according to Destatis


  • memory, nanographene, organic phototransistors, photosensitivity, Nanographene, Photosensitivity, Organic phototransistors, Memory