The van der Waals heterostructures have evolved as novel materials for complementing the Si-based semiconductor technologies. Group-10 noble metal dichalcogenides (e.g., PtS₂, PtSe₂, PdS₂, and PdSe₂) have been listed into two-dimensional (2D) materials toolkit to assemble van der Waals heterostructures. Among them, PdSe₂ demonstrates advantages of high stability in air, high mobility, and wide tunable bandgap. However, the regulation of p-type doping of PdSe₂ remains unsolved problem prior to fabricating p–n junction as a fundamental platform of semiconductor physics. Besides, a quantitative method for the controllable doping of PdSe₂ is yet to be reported. In this study, the doping level of PdSe₂ was correlated with the concentration of Lewis acids, for example, SnCl₄, used for soaking. Considering the transfer characteristics, the threshold voltage (the gate voltage corresponding to the minimum drain current) increased after SnCl₄ soaking treatment. PdSe₂ transistors were soaked in SnCl₄ solutions with five different concentrations. The threshold voltages from the as-obtained transfer curves were extracted for linear fitting to the threshold voltage versus doping concentration correlation equation. This study provides in-depth insights into the controllable p-type doping of PdSe₂. It may also push forward the research of the regulation of conductivity behaviors of 2D materials. [Figure not available: see fulltext.].