Method for Producing an Organic Field Effect Transistor and an Organic Field Effect Transistor

Research output: Intellectual propertyPatent application/Patent

Contributors

  • Novaled GmbH

Abstract

Methods for producing organic field effect transistors, organic field effect transistors, and electronic switching devices are provided. The methods may include providing a gate electrode and a gate insulator assigned to the gate electrode for electrical insulation on a substrate, depositing a first organic semiconducting layer on the gate insulator, generating a first electrode and an electrode insulator assigned to the first electrode for electrical insulation on the first organic semiconducting layer, depositing a second organic semiconducting layer on the first organic semiconducting layer and the electrode insulator, and generating a second electrode on the second organic semiconducting layer.

Details

Methods for producing organic field effect transistors, organic field effect transistors, and electronic switching devices are provided. The methods may include providing a gate electrode and a gate insulator assigned to the gate electrode for electrical insulation on a substrate, depositing a first organic semiconducting layer on the gate insulator, generating a first electrode and an electrode insulator assigned to the first electrode for electrical insulation on the first organic semiconducting layer, depositing a second organic semiconducting layer on the first organic semiconducting layer and the electrode insulator, and generating a second electrode on the second organic semiconducting layer.

Original languageEnglish
IPC (International Patent Classification)H01L 51/ 10 A I
Patent numberUS2017324051
Country/TerritoryGermany
Priority date26 Jul 2017
Priority numberUS201715660218
Publication statusPublished - 9 Nov 2017
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External IDs

ORCID /0000-0002-9773-6676/work/142659820