Method for Producing an Organic Field Effect Transistor and an Organic Field Effect Transistor
Research output: Intellectual property › Patent application/Patent
Contributors
- Novaled GmbH
Abstract
Methods for producing organic field effect transistors, organic field effect transistors, and electronic switching devices are provided. The methods may include providing a gate electrode and a gate insulator assigned to the gate electrode for electrical insulation on a substrate, depositing a first organic semiconducting layer on the gate insulator, generating a first electrode and an electrode insulator assigned to the first electrode for electrical insulation on the first organic semiconducting layer, depositing a second organic semiconducting layer on the first organic semiconducting layer and the electrode insulator, and generating a second electrode on the second organic semiconducting layer.
Details
Methods for producing organic field effect transistors, organic field effect transistors, and electronic switching devices are provided. The methods may include providing a gate electrode and a gate insulator assigned to the gate electrode for electrical insulation on a substrate, depositing a first organic semiconducting layer on the gate insulator, generating a first electrode and an electrode insulator assigned to the first electrode for electrical insulation on the first organic semiconducting layer, depositing a second organic semiconducting layer on the first organic semiconducting layer and the electrode insulator, and generating a second electrode on the second organic semiconducting layer.
Original language | English |
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IPC (International Patent Classification) | H01L 51/ 10 A I |
Patent number | US2017324051 |
Country/Territory | Germany |
Priority date | 26 Jul 2017 |
Priority number | US201715660218 |
Publication status | Published - 9 Nov 2017 |
External IDs
ORCID | /0000-0002-9773-6676/work/142659820 |
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